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Amorphous and Crystalline Silicon Carbide and Related Materials: Proceedings of the First International Conference, Washington DC, December 10 and 11, Softcover Repri Edition
Contributor(s): Harris, Gary L. (Editor), Yang, Cary Y. -W (Editor)

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 ISBN: 3642934080     ISBN-13: 9783642934087
Publisher: Springer
OUR PRICE: $104.49  

Binding Type: Paperback - See All Available Formats & Editions
Published: January 2012
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Click for more in this series: Springer Proceedings in Physics (Paperback)
Additional Information
BISAC Categories:
- Science | Physics - Crystallography
- Technology & Engineering | Electronics - Microelectronics
- Technology & Engineering | Electronics - Semiconductors
Dewey: 621.381
Series: Springer Proceedings in Physics (Paperback)
Physical Information: 0.46" H x 6.69" W x 9.61" L (0.77 lbs) 199 pages
 
Descriptions, Reviews, Etc.
Publisher Description:
Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.
 
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